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SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistor 2SA1434 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Features Adoption of FBET process. High DC current gain (hFE=500 to 1200). +0.1 2.4-0.1 Unit: mm Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VEBO 15V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Icp PC Tj Tstg Rating -60 -50 -15 -100 -200 200 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol ICBO IEBO hFE fT Cob Testconditons VCB = -40V, IE=0 VEB = -10V, IC=0 VCE = -5V , IC = -10mA VCE = -10V , IC = -10mA VCB = -10V , f = 1.0MHz 500 800 100 4.8 -0.2 -0.8 -60 -50 -15 -0.5 -1.1 Min Typ Max -0.1 -0.1 1200 MHz pF V V V V V Unit iA iA VCE(sat) IC = -50mA , IB = -1mA VBE(sat) IC = -10iA , IB = -1mA V(BR)CBO IC = -10iA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10iA , IC = 0 Marking Marking FL +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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